IRFPE50, SiHFPE Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole. IRFPE50 datasheet, IRFPE50 pdf, IRFPE50 data sheet, datasheet, data sheet, pdf, International Rectifier, V Single N-Channel HEXFET Power MOSFET in a . IRFPE50 datasheet, IRFPE50 circuit, IRFPE50 data sheet: IRF – Power MOSFET( Vdss=V, Rds(on)=ohm, Id=A),alldatasheet, datasheet, Datasheet.
|Published (Last):||17 September 2004|
|PDF File Size:||20.64 Mb|
|ePub File Size:||6.98 Mb|
|Price:||Free* [*Free Regsitration Required]|
IRFPE50, SiHFPE50 product information
Drain-Source resistance Rds-on max. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. Cables, Accessories Cables Accessories. Calibration equipment Electrical calibration equipment Pressure calibration equipment Temperature calibration equipment.
IRFPE50 데이터시트(PDF) – International Rectifier
Gate threshold voltage Vgs th. Education equipment Industrial irf;e50 tools Catalogues Laboratory measuring equipment Measuring of environmental and ambient parameters Equipment for testing of medical equipment Calibration equipment Soldering equipment Telecommunication measuring equipment.
FETs are unipolar transistors as they involve single-carrier-type operation. Nut M3 PJP 0.
IRFPE50 NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics
Expected add to cart to know when it arrives. Soldering equipment Soldering irons Soldering stations HotAir stations Desoldering stations Multifunction stations more Fluke, Mikroelektronika, Knipex and Logitech.
The customer is in the focus We want to make sure that customer is the center of attention. Region Macedonia Kosovo Global.
It shares with the IGBT an isolated gate that makes it easy to drive. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages.
Comfort Flexible options, including door to door transportation.
Comments 0 Write your comment. Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams.
The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. Equipment for testing of medical equipment.
Add to cart On stock. Drain – Source Voltage Vdss. Free technical support If something goes wrong, we will be ready and willing to help! Telecommunication measuring equipment Cable and pipe tracing Cooper networks IT networks Optical networks Spectrum analysers more Screw M3 PJP 0. Computer components Hardware Network Notebook-Battery.